Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment

KAWASAKI, Japan, July 13 (Bernama-BUSINESS WIRE) — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the “TRSxxx65H series,” the company’s third and latest^[¹] generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment. Volume shipments of the first 12 products, all 650V, start today, with seven products housed in TO-220-2L packages and five in DFN8×8 packages.

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