Toshiba Releases Automotive 40V N-channel Power MOSFETs With New High Heat Dissipation Package That Supports Larger Currents For Automotive Equipment

KAWASAKI, Japan, Jan 31 (Bernama-BUSINESS WIRE) — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched automotive 40V N-channel power MOSFETs, “XPQR3004PB” and “XPQ1R004PB,” that use the new L-TOGL™ (Large Transistor Outline Gull-wing Leads) package and feature a high drain current rating with low On-resistance. Shipments start today.

In recent years, the transition to EVs has fueled demand for components adapted to the increased power consumption of automotive equipment. The new products use Toshiba’s new L-TOGL™ package, which supports large currents, low resistance, and high heat dissipation. The products do not have an internal post[¹] structure, achieved by unifying the source connective part and outer leads with a copper clip. A multi-pin structure for the source leads decreases package resistance to about 30% that of the existing TO-220SM(W) package, pushing the drain current (DC) rating of XPQR3004PB to 400A—1.6 times higher than that of the current product[²]. Use of a thick copper frame has cut channel-to-case thermal impedance in XPQR3004PB to 50% that of the current product[²]. These features help larger current and lower the loss of automotive equipment.

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