KAWASAKI, Japan, Dec 9 (Bernama-BUSINESS WIRE) — Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect transistor (MOSFET) that arranges embedded Schottky barrier diodes (SBD) in a check pattern (check-pattern embedded SBD) to realize both low on-resistance and high reliability. Toshiba has confirmed that the design secures an approximately 20% reduction in on-resistance[1] (RonA) against its current SiC MOSFET, with no loss of reliability.[2]
Power devices are essential components for managing electric energy and reducing power loss in all kinds of electronic equipment, and for achieving a carbon neutral society. SiC is widely seen as the next generation material for the devices, as it delivers higher voltages and lower losses than silicon. While use of SiC now largely limited to inverters for trains, wider application is on the horizon, in areas including vehicle electrification and the miniaturization of industrial equipment. However, there is a problem that must first be overcome: bipolar conduction in the body diode during reverse operation of SiC MOSFET is harmful because it degrades on-resistance.