KAWASAKI, Japan, Aug 30 (Bernama-BUSINESS WIRE) — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched new power devices, the “TWxxxNxxxC series,” its 3rd generation silicon carbide(SiC) MOSFETs[¹][²] that deliver low on-resistance and significantly reduced switching loss. Ten products, five 1200V and five 650V products, have started shipping today.
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